tunnelmagneticresistance

Tunnelmagnetoresistance(TMR)isamagnetoresistiveeffectthatoccursinamagnetictunneljunction(MTJ),whichisacomponentconsistingoftwo ...,2009年9月15日—穿隧式磁阻元件，顧名思義便是透過穿隧效應(tunnelingeffect)使其得以運作，而產生穿隧效應最基本的單元就是一般所謂的磁性穿隧結(Magnetictunneling ...,由YYao著作·2023—Thiseffectiscalledthetunnelingmagnetoresistance(TMR)effect.Themagnetizationofthefreelayerca...

參考資訊如下
Tunnel magnetoresistance

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ...

穿隧式磁阻（Tunneling Magnetoresistance, TMR）

2009年9月15日 — 穿隧式磁阻元件，顧名思義便是透過穿隧效應(tunneling effect)使其得以運作，而產生穿隧效應最基本的單元就是一般所謂的磁性穿隧結(Magnetic tunneling ...

Tunneling magnetoresistance materials and devices for ...

由 Y Yao 著作 · 2023 — This effect is called the tunneling magnetoresistance (TMR) effect. The magnetization of the free layer can be manipulated using various methods ...

Tunneling Magnetoresistance | Evgeny Tsymbal

Tunneling magnetoresistance (TMR) is a dramatic change of the tunneling current in magnetic tunnel junctions when relative magnetizations of the two ...

Tunnel Magnetoresistance Effect and Its Applications

由 S Yuasa 著作 · 被引用 4 次 — Tunnel Resistance R. P. : low. Parallel (P) state. Tunnel Resistance R. AP. : high. Antiparallel (AP) state. Magnetic tunnel junction (MTJ). MR ratio ≡ (R. AP.

Octupole-driven magnetoresistance in an ...

由 X Chen 著作 · 2023 · 被引用 51 次 — Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface and, to date, has been studied ...

Tunneling Magnetoresistance

Tunneling magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is one of the most fundamental and important spintronic phenomena [69]. Thus, TMR ...

隧道磁阻

隧道磁阻（英語：TMR, Tunnel Magnetoresistance），又稱穿隧磁阻，是發生在磁 ... Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions.